Manufacture method of display device

ABSTRACT

It is an object of the present invention to reduce the consumption of materials for manufacturing a display device, simplify the manufacturing process and the apparatus used for it, and lower the manufacturing costs. The present invention provides a technique to manufacture a display device, applying a means to form a pattern such as a contact hole formed in a semiconductor film, a wiring or an insulating film, or a mask pattern to form such a pattern by drawing directly, a means to remove a film, such as etching and ashing, and a film forming means to selectively form an insulating film, a semiconductor film and a metal film on a predetermined region.

TECHNICAL FIELD

The present invention relates to a manufacturing method of a displaydevice that displays images or the like with pixels arranged on a planesurface. Especially the present invention relates to a technique tomanufacture the display device continuously using a flexible substrate.

Background Art

Monitoring devices (liquid crystal monitors) for computers andtelevision receivers (liquid crystal TV) are sold on the market aspractical product examples of display devices (liquid crystal displaydevices) using electro-optical characteristics of liquid crystal.

The liquid crystal display device of active matrix type, which is themainstream presently, has a pixel structure where a switching elementthat is called a thin film transistor (TFT) is provided for each pixel.The technique to manufacture such a display device is developed bycombining a photolithography process using a photomask, and a filmforming or etching process using vacuum equipment and the like properly,similar to a manufacturing technique of a semiconductor integratedcircuit.

A manufacturing process like this includes a process in which a film ofa conductive material, an insulator, a semiconductor film and the likeis formed by sputtering or chemical vapor deposition (CVD), a process inwhich an intended pattern is made by soaking a resist film in adeveloping solution after applying a photosensitive resist film on thefilm and exposing it through a mask by using projection photolithographyequipment, and a process in which etching is performed using a solutionor an active reactive gas, with these processes combined and performedrepeatedly.

DISCLOSURE OF INVENTION Problem to be Solved by the Invention

For a conventional manufacturing technique of a display device, manykinds and large quantity of chemical materials including organic onesand inorganic ones are used. Especially, organic chemicals are used inlarge quantity for a photolithography process, so that considerable workand costs are needed for the waste liquid treatment. Specifically,approximately 95% of a resist composition is wasted when deposited byspin coating. That is, most of the materials are thrown away.Furthermore, large quantities of chemicals are consumed when developingand peeling treatments are performed. In addition, most of the filmsincluding a conductive material, an insulator and a semiconductor filmformed on the entire surface of a substrate are removed by etching, andthe percentage that a wiring or the like remains on the substrate isseveral to several dozen percent.

As is clear from the above, in the conventional manufacturing techniqueof a display device, most of the materials are thrown away, whichincreases environmental burdens, as well as affects the manufacturingcosts. Such tendency has become obvious as the size of the substrates onproduction lines was enlarged.

In view of the above problems, the object of the present invention is toreduce the consumption of materials for manufacturing a display device,simplify the manufacturing process and the apparatus used for it, andlower the manufacturing costs.

Means for Solving the Problem

The present invention provides a technique to manufacture a displaydevice, applying a means to form a pattern such as a contact hole formedin a semiconductor film, a wiring or an insulating film, or a maskpattern of a composition comprising a high molecular weight resin toform such a pattern by drawing directly, a means to remove a film, suchas etching and ashing, and a film forming means to selectively form aninsulating film, a semiconductor film and a metal film on apredetermined region.

That is, the present invention uses at least a pattern drawing meanscomprising a droplet discharging means where a plurality of dischargeoutlets for a composition is arranged in a uniaxial direction, a filmremoving means that changes a gas into plasma and removes a film with aplurality of discharging ports for the plasma formed by arranging in auniaxial direction, and a film forming means that changes a gas intoplasma and forms a film with a plurality of discharging ports for theplasma arranged in a uniaxial direction. And the present inventionincludes a step of forming a film such as an insulating film, asemiconductor film, a metal film and others by the film forming means, astep of forming a wiring pattern by drawing with a composition includinga conductive material on a substrate by the pattern drawing means, astep of forming a mask pattern by drawing with a composition of a highmolecular weight resin on the substrate by the pattern forming means, astep of etching that selectively removes the film formed on thesubstrate by the film removing means, and a step of removing the maskpattern comprising a high molecular weight resin by the film removingmeans.

In addition, the present invention includes a step of forming a patternof a conductive film including a gate electrode, source and drainelectrodes by a pattern drawing means comprising a droplet dischargingmeans where a plurality of discharge outlets for a composition isarranged in a uniaxial direction, a step of forming a non-single crystalsemiconductor film and an inorganic insulating film by a film formingmeans that changes a gas into plasma and forms a film with a pluralityof discharging ports for the plasma arranged in a uniaxial direction,and a step of removing a part of the non-single crystal semiconductorfilm and/or the insulating film by a film removing means that changes agas into plasma and removes the formed film with a plurality ofdischarging ports for the plasma arranged in a uniaxial direction.

Each process described above may be performed under an atmosphericpressure or a pressure around an atmospheric pressure. The atmosphericpressure or a pressure around the atmospheric pressure may be 1.3×10¹ to1.06×10⁵ Pa.

As for the pattern drawing means, a structure in which a composition isdischarged using piezoelectric elements, as is the case with ink-jet, ora structure in which the dropping amount is controlled by setting aneedle valve in a discharge outlet may be applied as the dropletdischarging means comprising a discharge outlet for a composition.

As a composition to form a conductive pattern that functions as a wiringor the like, a conductive composition that includes metal microparticleswhose size is approximately 1 μm, or a conductive polymer composition inwhich metal microparticles whose size is approximately 1 μm andultrafine particles (nano particles) whose size is 1 μm or less aredispersed may be used.

The film forming means has a structure comprising a nozzle body where aplurality of discharging ports for a gas in a plasma state or a gasincluding reactive radicals or ion species is arranged in a uniaxialdirection. Furthermore, the film removing means has a structure similarto this, and the structure can be used for the both cases by properlyselecting a gas to be introduced therein. The representative reactivegas that is applied for the film forming means is a siliconized gas suchas silane, and it can form a non-single crystal semiconductor film. Inaddition, by combining an oxide gas such as oxygen and nitrous oxide ora nitride gas such as nitrogen and ammonia with a siliconized gas, aninsulating film of silicon oxide, silicon nitride or the like can beformed.

The representative reactive gases that are applied for the film removingmeans include a fluoride gas such as nitrogen trifluoride and sulfurhexafluoride, and a chloride gas such as chlorine and boron trichloride.By using these gasses, etching of various films including asemiconductor film can be performed.

Effect of the Invention

As described above, a display device can be formed on a flexiblesubstrate without using a photomask. Furthermore, in the processes ofthe present invention, each of the process to form a film, the processto form a wiring pattern, the etching process, the process to remove amask pattern can be performed under an atmospheric pressure or apressure around an atmospheric pressure respectively.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram to show a manufacturing process of a display deviceof the present invention, and it is a diagram showing an example using aroll-to-roll method.

FIG. 2 is a diagram to show a manufacturing process of a display deviceof the present invention, and it is a diagram showing an example using aroll-to-roll method.

FIG. 3 is a diagram to show a manufacturing process of a display deviceof the present invention, and it is a diagram showing an example using aroll-to-roll method.

FIG. 4A and FIG. 4B are diagrams to show an example of a pattern drawingmeans of the present invention.

FIG. 5 is a diagram to show an example of a pattern drawing means of thepresent invention.

FIG. 6A and FIG. 6B are diagrams to show an example of a film formingmeans or a film removing means of the present invention.

FIG. 7 is a diagram to show a structure of a nozzle body for a filmforming means or a film removing means of the present invention.

FIG. 8 is a diagram to show a structure of a nozzle body for a filmforming means or a film removing means of the present invention.

FIG. 9A to FIG. 9D are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 10A to FIG. 10D are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 11A to FIG. 11D are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 12 is a sectional view to describe a manufacturing process of adisplay device of the present invention.

FIG. 13A to FIG. 13D are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 14A to FIG. 14D are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 15A to FIG. 15C are sectional views to describe a manufacturingprocess of a display device of the present invention.

FIG. 16A to FIG. 16C are diagrams to show an aspect of a display deviceof the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

An embodiment mode of the present invention will be described in detailwith reference to drawings. The present invention, especially, uses amethod in which a substrate having flexibility is sent from one side tothe other side continuously and predetermined processing treatments areconducted therebetween. That is, a substrate having flexibility iswinded off from a roll in one side and sent to a roll in the other sideto be reeled, which means the so-called roll-to-roll method process isperformed.

An aspect of a pattern drawing means of the present invention will bedescribed using FIG. 4A and FIG. 4B. A droplet discharging means 403 isprovided to discharge a composition on a flexible substrate 400 whilethe flexible substrate 400 is sent from one roll 401 to the other roll402 to be reeled. This droplet discharging means 403 uses a plurality ofheads 405 respectively having a discharge outlet 406, arranged in auniaxial direction (in a direction parallel to the width of the flexiblesubstrate 400). An imaging means 404 is provided to detect a markerposition on the flexible substrate 400 or to observe a pattern. FIG. 4Ais a schematic diagram viewed from the side, and FIG. 4B is a schematicdiagram viewed from the top.

The droplet discharging means 403 where discharge outlets 406 arearranged in a uniaxial direction is placed so as to intersect with thedirection in which the flexible substrate 400 is delivered. The angleformed by the droplet discharging means 403 and the direction in whichthe substrate is delivered is not necessarily perpendicular. The dropletdischarging means 403 and the direction in which the substrate isdelivered may intersect each other at an angle of 45 to 90 degrees. Theresolution of a pattern formed by this droplet discharging means 403depends on the pitch of the discharge outlets 406. By setting the angleformed by the droplet discharging means 403 and the direction in whichthe flexible substrate 400 is delivered 90 degrees or smaller, the pitchof the discharge outlets can be narrowed substantially, which ispreferable for forming a microscopic pattern.

The head 405 of the droplet discharging means 403 can preferably controlthe amount and the timing of a composition which is discharged ordropped, and it may have a structure in which the composition isdischarged using piezoelectric elements as is the case with ink-jet, ora structure in which the dropping amount is controlled by setting aneedle valve in a discharge outlet.

It is not necessary for the heads 405 which constitute the dropletdischarging means 403 to perform their discharge operation at the sametiming. By controlling the timing of each head 405 discharging acomposition in accordance with the movement of the flexible substrate400, a pattern by the objected composition can be formed.

That is, as shown in FIG. 5, each head 405 of the droplet dischargingmeans 403 is connected to a controlling means 407, and that iscontrolled by a computer 410 so that a preprogrammed pattern can bedrawn. The timing of drawing may be based on a marker 411 that is formedon the flexible substrate 400, for example. That is detected by animaging 404, and changed into a digital signal at an image treatmentmeans 409. Then the digital signal is recognized by the computer 410that generates a control signal, and the control signal is sent to thecontrolling means 407. Of course, information of the pattern to beformed on the flexible substrate 400 is stored in a storage medium 408,and a control signal is sent to the controlling means 407, based on theinformation, so that each head 405 of the droplet discharging means 403can be controlled separately.

FIG. 6A and FIG. 6B are diagrams to show an aspect of a film removingmeans that comprises a nozzle body where a plurality of dischargingports for a gas in a plasma state or a gas including reactive radicalsor ion species is arranged in a uniaxial direction to remove a film. Anozzle body 603 that comprises a plurality of discharging ports 605 thatspout the above-mentioned reactive gas while a flexible substrate 600 issent from a roll 601 in one side to a roll 602 in the other side to bereeled is provided. A plasma generating means 606, a gas supplying means607 and a gas evacuation means 608 are connected to each exhaust-nozzle605 in the nozzle body 603.

In this case, as is the case with the example shown in FIG. 5, eachnozzle body 603 can be controlled independently by a computer, and canperform a predetermined treatment spouting a reactive gas selectivelyfor a predetermined region in the flexible substrate 600, based on theimage information (positional information) by an imaging 604. That is,as for removal of a film, as is the case with a dry etching technique, afilm can be removed selectively, by blowing active radicals or areactive gas so that reaction proceeds at that portion of the film.

When the film is a polymer composition as typified by a photoresistmaterial, the so-called ashing treatment to remove the composition canbe performed by using a gas that includes oxygen.

Furthermore, when a siliconized gas as typified by silane or the like isselected, deposition of a film is possible, and it can be applied as afilm forming means. For example, a siliconized gas typified by silanemay be used for forming a non-single crystal silicon film. When asiliconized gas is mixed with an oxygenated gas such as nitrous oxide ora nitride gas, a silicon oxide film or a silicon nitride film can beformed.

FIG. 7 shows a structure of a nozzle body that is especially suitablefor performing a surface treatment such as etching and ashing (removalof a resist film) by using a gas in a plasma state, reactive radicals orion species. A gas supplying means 703 that supplies a gas forperforming a surface treatment such as etching and ashing, a gasevacuation means 706 for that gas, an inert gas supplying means 707 andan evacuation means 710 for that gas are connected to a nozzle body 701.The gas supplied from the gas supplying means 703 is changed into plasmaor generates reactive radicals or ion species in an inner circumferencegas supplying tube 700, then is blown from a gas exhaust-nozzle 704 toan object to be treated. After that, the gas is evacuated from an outercircumference gas evacuation tube 705 by the gas evacuation means 706.

In the outer side of that, an inert gas supplying port 708 is provided,and an evacuation port 709 is provided in the outermost part so that agas curtain is made, which forms a structure in which a treatment spaceis blocked from the circumferential atmosphere.

Furthermore, a structure in which a gas is circulated may beincorporated by providing a gas purification means 712 between the gassupplying means 703 and the gas evacuation means 706. By incorporatingsuch a structure, the consumption of a gas can be reduced. In addition,the gas evacuated by the gas evacuation means 706 may be recovered andpurified so as to be used in the gas supplying means 703 again.

In order to maintain a stable discharge under an atmospheric pressure ora pressure around an atmospheric pressure, a space between the nozzlebody 701 and an object to be treated may be 50 mm or less, preferably 10mm or less, and more preferably, 5 mm or less.

It is the most preferable that the shape of the nozzle body is ancoaxial cylinder having an electrode 702, which is placed inside theinner circumference gas supplying tube 700, as the center, but as longas it has a structure in which a treatment gas in a plasma state can besupplied locally in a similar way, it is not limited to this.

As the electrode 702, stainless-steel, brass, or other alloy, andaluminum, nickel, or other metal of elemental substances may be used,and it may be formed in the shape of a stick, a sphere, a flat plate, atube or the like. As for a power supply 711 that supplies electric powerto the electrode 702, a direct-current power source or a high frequencypower source can be applied. In the case of using a direct-current powersource, it is preferable to supply an electric power intermittently tostabilize the discharge, and it is preferable to set the frequency from50 Hz to 100 kHz, and the pulse duration time 1 to 1000 μsec.

As for a selection of a treatment gas, oxygen may be used for thepurpose of removing a resist. For the purpose of etching of asemiconductor film such as silicon, nitrogen trifluoride (NF₃), sulfurhexafluoride (SF₆), or other fluoride gas may be used, and for thepurpose of etching metals such as aluminum, titanium and tungsten,carbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), or other fluoridegas may be used properly combined with chloride (Cl₂), boron trichloride(BCl₃), or other chloride gas. Furthermore, in order to maintain thedischarge stably, these fluoride gases and chloride gases may be useddiluted by a rare gas such as helium, argon, krypton, and xenon.

As for a gas used for forming a gas curtain, a rare gas such as helium,argon, krypton and xenon, or an inert gas such as nitrogen is used. Dueto the gas curtain function, a reaction space where a treatment gas in aplasma state reacts with an object to be treated is surrounded by theforegoing inert gas and blocked from the circumferential atmosphere.

An atmospheric pressure or a pressure around an atmospheric pressure maybe 1.3×10¹ to 1.06×10⁵ Pa. Within this, in order to keep the reactionspace under a pressure lower than the atmospheric pressure, the nozzlebody 701 and the substrate to be treated may be hold in a reactionchamber where a closed space is made, with a structure in which reducedpressure is kept by an evacuation means. In this case, too, setting agas curtain function is effective to perform a selective treatment.

In the case where especially selective processing is needed for etching,a nozzle body 801 may have a structure in which a gas exhaust-nozzle 704of an inner circumference gas supplying tube 800 is narrowed and anelectrode 802 is in the shape of a stick or a needle so that plasma isprevented from spreading, as shown in FIG. 8. Furthermore, a tip of theelectrode 802 may protrude from the gas exhaust-nozzle 704 so thathigh-density plasma is formed between an object to be treated 811 andthe gas exhaust-nozzle 704. The other structure is similar to FIG. 7,and the detailed description is skipped here.

Next, a method of manufacturing a display device from a long sheet offlexible substrate by combining the foregoing pattern drawing means,film removing means and film forming means will be described, withreference to FIG. 9 to FIG. 12. The display device shown here as anexample is a display device of an active matrix type in which TFT isprovided for each pixel.

FIG. 9A is a process to form a conductive film to form a gate electrodeand a wiring. A conductive film 11 comprising aluminum, titanium,tantalum, molybdenum or the like is formed on a substrate 10 by a filmforming means 12 comprising a nozzle body where a plurality ofdischarging ports for plasma is arranged in a uniaxial direction. It isnot necessary to form the conductive film 11 on the entire surface ofthe substrate 10, and the film may be selectively formed around a regionwhere a gate electrode and a wiring are to be formed.

After that, as shown in FIG. 9B, a mask pattern 14 to form a gateelectrode is formed on the conductive film 11 by selectively discharginga resist composition using a droplet discharging means 13 where aplurality of discharge outlets for a composition is arranged in auniaxial direction. In this case, since the droplet discharging meanshas discharge outlets arranged only in a uniaxial direction, heads onlyin a needed part may be operated (head 13A). In order to treat theentire surface of the substrate, either one of the substrate 10 and thedroplet discharging means 13, or both of the two may be moved. Such atreatment can be applied as well in the processes below.

FIG. 9C is a process to form a gate electrode and a wiring 16 byperforming etching, using the mask pattern 14. The etching is performedby using a film removing means where a plurality of discharging portsfor plasma is arranged in a uniaxial direction to remove a film.Although a fluoride gas or a chloride gas is used for the etching of theconductive film 11, in a nozzle body 15, it is not necessary that thereactive gas is sprayed to the entire surface of the substrate 10. Anozzle body 15 a of the nozzle body 15, which faces a region where theconductive film 11 is formed, may be operated so that only the regionwhere the conductive film 11 is formed is treated.

FIG. 9D is a process to remove the mask pattern 14, and a film removingmeans where a plurality of discharging ports for plasma is arranged in auniaxial direction to remove a film is used. In a nozzle body 17, anoxygen plasma treatment is performed to perform ashing, but it is notnecessary that the treatment is performed on the entire surface of thesubstrate. A nozzle body 17 a only around a region where the maskpattern is formed may be operated so that the treatment is performedselectively.

In FIG. 10A, a gate insulating film 19, a non-single crystal siliconfilm 20 and a protective film 21 are formed. To form a laminate productof these, a plurality of nozzle bodies 18 that handle formation of eachfilm may be prepared so that the film is formed continuously, or thelamination may be formed sequentially by changing gas species every timethe nozzle body 18 is scanned. Since the region where a film is to beformed is not the entire surface of a substrate 10, a reactive gas in aplasma state may be supplied from the whole area of the nozzle body 18only to the region where TFT is to be formed, for example, so that afilm is formed. In the case of forming a silicon oxide film, an oxidegas of silane and oxygen or the like may be used, or there is also anoption of using TEOS. A gate insulating film 19 may be formed on theentire surface of the substrate, or formed selectively around a regionwhere TFT is to be formed, of course.

FIG. 10B is a process to form a mask pattern 23. The mask pattern 23 forforming a protective film of a channel part is formed by discharging aresist composition selectively by a selected head 22 a of a dropletdischarging means 22 where a plurality of discharge outlets for acomposition is arranged in a uniaxial direction.

FIG. 10C is a process to form a protective film 25 of a channel part byperforming etching of the protective film 21 by a nozzle body 24, usingthe mask pattern 23. The channel protective film formed of a siliconnitride film may be performed by using a fluoride gas such as SF₆.

After that, the mask pattern 23 is removed in the same way as the caseof FIG. 9D by the film removing means.

FIG. 10D is a process to form a non-single crystal silicon film 27 ofone conductivity type for forming a source and a drain of TFT. Typicallyit is formed of n-type non-single crystal silicon, and the reactive gassupplied from a nozzle body 26 may be a siliconized gas such as silanecombined with a gas that includes a periodic law 15th family elementtypified by phosphine.

FIG. 11A is a process to form source and drain wirings 29 and 30 bycoating a conductive paste. A droplet discharging means 28 may use astructure in which droplets are discharged by using piezoelectricelements, or may use a dispenser method. In both cases, a conductivecomposition that includes metal microparticles whose size isapproximately 1 μm is selectively dropped by a selected head 28 a of thedroplet discharging means 28, so that a pattern of the source and drainwirings 29 and 30 is formed directly. Or, a conductive polymercomposition in which metal microparticles whose size is approximately 1μm and ultrafine particles of nanosize are dispersed may be used. Byusing this, there is a significant effect that contact resistance withthe non-single crystal silicon film 27 of one conductivity type can bereduced. After that, in order to harden the wiring pattern byvolatilizing a solvent of the composition, for heating, a heated inertgas may be blown from a nozzle body in the same way, or a halogen lampheater may be used to heat.

In FIG. 11B, using the formed source and drain wirings 29 and 30 asmasks, etching of the non-single crystal silicon film 27 of oneconductivity type and the non-single crystal silicon film 20 that areplaced in the under side of the source and drain wirings 29 and 30 isperformed. The etching is performed by emitting a fluoride gas in aplasma state from a nozzle body 31. In this case, in the amount of areactive gas blown, the amount of spraying is different between a regionaround a place the wiring is formed and the other region. By sprayingthe gas in large quantity for a region where the non-single crystalsilicon film is exposed, the balance of etching can be kept, and theconsumption of the reactive gas can be controlled.

FIG. 11C is a process to form a protective film on the entire surface.By spouting a reactive gas in a plasma state from a nozzle body 32,typically, a silicon nitride film 33 is formed.

FIG. 11D is a process to form a contact hole. By spouting a reactive gasin a plasma state selectively on a place where a contact hole is to beformed, using a nozzle body 34, a contact hole 35 can be formed withouta mask.

After that, as shown in FIG. 12, a pixel electrode 37 is formed by aprinting method. This is formed by making a predetermined pattern of acomposition including conductive fine particles of indium tin oxide, tinoxide, zinc oxide or the like on a substrate directly, using a dropletdischarging means 36. By using a composition of conductive polymer withparticles of indium tin oxide dispersed, as the composition above,especially, resistance in the contact part with the non-single crystalsilicon film 27 of one conductivity type can be reduced. In thisprocess, the pixel electrode is formed.

By the following process, an element substrate that is one of thesubstrates to form a display device of active matrix type where aswitching element of TFT is placed for each pixel can be manufactured,without using a conventional photolithography process.

As the other embodiment mode of the present invention, TFT and a displaydevice using TFT can be manufactured without using a mask pattern forwhich a resist composition is used, by using the pattern drawing means,the film forming means, the film removing means that are structured asdescribed in FIG. 4 to FIG. 8.

In FIG. 13A, a bank 51 comprising an insulating resin material is formedon a substrate 10 by using a droplet discharging means 50. As shown inFIG. 13B, the bank 51 having an opening part 49 is used for forming agate electrode 53 by a droplet discharging means 52. That is, the bank51 works as a bulkhead that prevents a composition from spreadingperipherally when the conductive composition is discharged on theopening part 49, so that a predetermined pattern is formed.

FIG. 13C is a process to form a gate insulating film, and a gateinsulating film 55 is formed on the gate electrode 53, using a nozzlebody 54. After that, a semiconductor film 57 is formed by atmosphericpressure plasma using a nozzle body 56, as shown in FIG. 13D.

FIG. 14A is a process to form a protective film 59 on the semiconductorfilm 57 by atmospheric pressure plasma using a nozzle body 58, and aninsulating film comprising silicon oxide, silicon nitride or the like isformed selectively. This process is unnecessary for the case of achannel etching type.

FIG. 14B is a process to form a semiconductor film 61 of oneconductivity type for forming a source and a drain of TFT. Byatmospheric pressure plasma CVD using a nozzle body 60, the film isformed selectively.

In FIG. 14C, a source and drain wiring 63 is formed by coating aconductive paste. A droplet discharging means 62 may use a structure inwhich droplets are discharged by using piezoelectric elements, or mayuse a dispenser method. In both cases, a conductive composition thatincludes metal microparticles whose size is approximately 1 μm isselectively dropped, so that a pattern of the source and drain wiring isformed directly. After that, in order to harden the wiring pattern byvolatilizing a solvent of the composition, a heated inert gas may beblown from a nozzle body in the same way, or a halogen lamp heater maybe used to heat.

In FIG. 14D, using the formed source and drain wiring 63 as a mask,etching of the semiconductor film 61 of one conductivity type that isplaced in the under side of the source and drain wiring 63 is performed.The etching is performed by emitting a fluoride gas in a plasma statefrom a nozzle body 64. In this case, the amount of a reactive gas blownis different between a region around a place the wiring is formed andthe other region. By spraying the gas in large quantity for a regionwhere the non-single crystal silicon film is exposed, the balance ofetching can be kept, and the consumption of the reactive gas can becontrolled.

FIG. 15A is a process to form a protective film. By spouting a reactivegas in a plasma state from a nozzle body 65, a silicon nitride film 66is formed.

FIG. 15B is a process to form a contact hole. By spouting a reactive gasin a plasma state selectively on a place where a contact hole is to beformed, using a nozzle body 67, a contact hole 68 can be formed withouta mask.

After that, as shown in FIG. 15C, a pixel electrode 70 is formed by aprinting method. This is formed by making a predetermined pattern of acomposition including conductive fine particles of indium tin oxide, tinoxide, zinc oxide or the like on a substrate directly, using a nozzlebody 69, by a droplet discharging method. In this process, the pixelelectrode can be formed.

By the following process, an element substrate that is one of thesubstrates to form a display device of active matrix type where aswitching element of TFT is placed for each pixel can be manufactured,without using a conventional photolithography process.

FIG. 1 to FIG. 4 are drawings to describe one of embodiments of the casewhere the invention is applied to a roll-to-roll method in which theprocesses above are performed continuously. Here, the one aspect will bedescribed, corresponding to the processes shown in FIG. 9 to FIG. 12.

As shown in FIG. 1, a long sheet of flexible substrate 100 is sent froma roll in a wind-off side 101 sequentially, and after that, a metal filmis formed by a droplet discharging means 102 and a heating means 103.For the heating means 103, a lamp heater and a heater of gas-heatingtype can be used. After that, a mask pattern is formed by a dropletdischarging means 104 and a heating means 105.

After the mask pattern is formed, etching is performed by using a nozzlebody 106 where a plurality of discharging ports for plasma is arrangedin a uniaxial direction to remove a film, in order to form a gateelectrode/wiring. A fluoride gas or a chloride gas is used for etchingof a metal film. With the nozzle body, it is not necessary to spray thereactive gas on the entire surface of the substrate, and the treatmentmay be performed actively around the place where the metal film isremoved. For removing the mask pattern, a nozzle body 107 where aplurality of discharging ports for plasma is arranged in a uniaxialdirection to remove a film is used.

Formation of a gate insulating film, a non-single crystal silicon film,a protective film is performed continuously by using nozzle bodies 108,109 and 110 where a plurality of discharging ports for plasma isarranged respectively in a uniaxial direction to form a film. Since theregion where the film is to be formed is not the entire surface of thelong sheet of flexible substrate 100, the film formation may beperformed by supplying a reactive gas in a plasma state from the wholearea of the nozzle body only on a region where TFT is to be formed, forexample.

In FIG. 2, by discharging a resist composition selectively by using adroplet discharging means 111 where a plurality of discharge outlets fora composition is arranged in a uniaxial direction and a heating means112, a mask pattern to form a channel protective film is formed. Etchingby a nozzle body 113 where a plurality of discharging ports for plasmais arranged in a uniaxial direction to remove a film and ashing by anozzle body 114 where a plurality of discharging ports for plasma isarranged in a uniaxial direction to remove a film are similar to theforegoing case.

After that, a non-single crystal semiconductor film of n-type is formedby a nozzle body 115 where a plurality of discharging ports for plasmais arranged in a uniaxial direction to form a film. Then, a source anddrain wiring is formed by coating a conductive paste, using a dropletdischarging means 116. In any case, the source and drain wiring patternis directly formed by dropping a conductive composition including metalmicroparticles whose size is approximately 1 μm selectively. After that,in order to harden the wiring pattern by volatilizing a solvent of thecomposition, a heating means 117 is used.

Using the source and drain wiring as a mask, etching of the non-singlecrystal silicon film of n-type and a non-single crystal silicon filmthat are placed in the under side of the source and drain wiring isperformed. The etching is performed by emitting a fluoride gas in aplasma state from a nozzle body 118. In this case, the amount of areactive gas blown is different between a region around a place thewiring is formed and the other region. By spraying the gas in largequantity for a region where the non-single crystal silicon film isexposed, the balance of etching can be kept, and the consumption of thereactive gas can be controlled.

As a process to form a protective film on the entire surface, a reactivegas in a plasma state is spouted from a nozzle body 119 so that asilicon nitride film is formed.

After that, in FIG. 3, by spouting a reactive gas in a plasma stateselectively on the place where a contact hole is to be formed, using anozzle body 120, a contact hole can be formed without a mask.

After that, using a droplet discharging means 121 and a heating means122, a transparent electrode is formed. This is formed by making apredetermined pattern of a composition including conductive fineparticles of indium tin oxide, tin oxide, zinc oxide or the like on asubstrate directly, using the droplet discharging means. In thisprocess, the pixel electrode can be formed.

The following process is a process needed in the case of manufacturing aliquid crystal display device. In the process, an orientation film isformed by a droplet discharging means 123, and a rubbing treatment isperformed by a rubbing means 124. In addition, a sealing material isdrawn by a droplet discharging means 126 and spacers are dispersed by adispersing means 127, then liquid crystal is dropped on a long sheet offlexible substrate 100 by a droplet discharging means 128.

For the opposite side, a substrate is supplied from the other wind-offroller 129, and attached. By hardening the sealing material by ahardening means 130, the two substrates are bonded together. Inaddition, by a dividing means131, the substrate is cut into a panel sizeaccordingly, so that a liquid crystal panel 132 can be manufactured.

Using a display device manufactured by such a structure, a televisionreceiver, a computer, a picture reproducer shown in FIG. 16 as examples,or other electronic devices can be completed.

FIG. 16A is an example of completing a television receiver, applying thepresent invention, and it is structured by a housing 2001, a support2002, a display part 2003, a speaker part 2004, a video input terminal2005 and the like. By using the present invention, especially atelevision receiver whose screen size is 30 inches or larger can bemanufactured at low cost. Furthermore, by using a display device of thepresent invention, a television receiver can be completed. This is aneffect of using a flexible substrate that is thinner and whose specificgravity is smaller than glass, as a substrate.

FIG. 16B is an example of completing a notebook personal computer,applying the present invention, and it is structured by a main body2201, a housing 2202, a display part 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206 and the like. By using thepresent invention, a personal computer having the display part 2203 thatis 15 to 17 inches class can be manufactured at low cost.

FIG. 16C is an example of completing a image reproducer, applying thepresent invention, and it is structured by a main body 2401, a housing2402, a display part A 2403, a display part B 2404, a recording mediareading part 2405, an operation key 2406, a speaker part 2407 and thelike. By using the present invention, a image reproducer having thedisplay part A 2403 that is 15 to 17 inches class and also being lightcan be manufactured at low cost.

In order to form a microscopic pattern by the embodiment modes above, acomposition with metal microparticles whose average size is 1 to 50 nm,preferably 3 to 7 nm, dispersed in an organic solvent may be used.Typically, particles of silver or gold are used, and the surface iscoated with a dispersing agent such as amine, alcohol and thiol. Theorganic solvent is phenol resin, epoxy resin or the like, andthermosetting or photo-curing one is applied. In order to modify theviscosity of the composition, a thixotropic agent or a diluting solventmay be added.

As for the composition discharged on the surface in proper quantity by adroplet discharging means, the organic solvent is hardened by a heatingtreatment or a light irradiation treatment. Due to the contraction involume that accompanies the hardening of the organic solvent, the metalmicroparticles contact each other, and fusion, welding or aggregation isfacilitated. That is, a wiring with metal microparticles whose averagesize is 1 to 50 nm, preferably 3 to 7 nm, fused, welded or aggregated isformed. In this way, by forming a condition where metal microparticlescontact each other on their surfaces due to fusion, welding oraggregation, lower resistance of the wiring can be realized.

The present invention makes it easy to form a wiring pattern whose linewidth is approximately 1 to 10 μm, by forming a conductive pattern usingsuch a composition. In addition, even when a contact hole isapproximately 1 to 10 μm in diameter, the composition can fill theinside of the hole. That is, a multilayer wiring structure can be formedby a microscopic wiring pattern.

When particles of an insulating material are used instead of metalmicroparticles, an insulating pattern can be formed in the same way.semiconductor film and a metal film on a predetermined region.

1. (canceled)
 2. A method for manufacturing a display device comprising:sending a flexible substrate from a first roll in a wind-off side;forming a metal film over the flexible substrate by discharging acomposition including a conductive material over the flexible substratefrom a plurality of discharge outlets arranged in a uniaxial direction;forming a mask pattern over the metal film by discharging a compositionincluding a high molecular weight resin over the metal film from aplurality of discharge outlets arranged in a uniaxial direction; forminga wiring by etching the metal film by changing a gas into plasma andsupplying the plasma from a plurality of discharging ports arranged in auniaxial direction to the metal film; removing the mask pattern bychanging a gas into plasma and supplying the plasma from a plurality ofdischarging ports arranged in a uniaxial direction to the mask; forminga film over the wiring by changing a gas into plasma and supplying theplasma over the wiring from a plurality of discharging ports arranged ina uniaxial direction; and sending an opposing substrate from a secondroll so that the opposing substrate is attached to the flexiblesubstrate.
 3. The method for manufacturing the display device accordingto claim 2, further comprising forming a liquid crystal over theflexible substrate by a droplet discharging means.
 4. The method formanufacturing the display device according to claim 2, wherein each ofthe step of forming the wiring, the step of removing the mask pattern,and the step of forming the film is performed under an atmosphericpressure or a pressure around an atmospheric pressure.
 5. The method formanufacturing the display device according to claim 2, wherein afluoride gas or a chloride gas is used for etching the metal film.
 6. Amethod for manufacturing a display device comprising: sending a flexiblesubstrate from a first roll in a wind-off side; forming a metal filmover the flexible substrate by discharging a composition including aconductive material over the flexible substrate from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a first filmover the metal film by changing a gas into plasma and supplying theplasma over the metal film from a plurality of discharging portsarranged in a uniaxial direction; forming a second film over the firstfilm by changing a gas into plasma and supplying the plasma over thefirst film from a plurality of discharging ports arranged in a uniaxialdirection; removing a part of the first film or the second film bychanging a gas into plasma and supplying the plasma from a plurality ofdischarging ports arranged in a uniaxial direction; and sending anopposing substrate from a second roll so that the opposing substrate isattached to the flexible substrate.
 7. The method for manufacturing thedisplay device according to claim 6, further comprising forming a liquidcrystal over the flexible substrate by a droplet discharging means. 8.The method for manufacturing the display device according to claim 6,wherein each of the step of forming the first film, the step of formingthe second film, and the step of removing the part of the first film orthe second film is performed under an atmospheric pressure or a pressurearound an atmospheric pressure.
 9. The method for manufacturing thedisplay device according to claim 6, further comprising: forming a maskpattern over the metal film by discharging a composition including ahigh molecular weight resin over the metal film from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a wiring byetching the metal film by changing a gas into plasma and supplying theplasma from a plurality of discharging ports arranged in a uniaxialdirection to the metal film; and removing the mask pattern by changing agas into plasma and supplying the plasma from a plurality of dischargingports arranged in a uniaxial direction to the mask pattern.
 10. Themethod for manufacturing the display device according to claim 9,wherein a fluoride gas or a chloride gas is used for etching the metalfilm.
 11. A method for manufacturing a display device comprising:sending a flexible substrate from a first roll in a wind-off side;forming a gate electrode over the flexible substrate by discharging acomposition including a conductive material over the flexible substratefrom a plurality of discharge outlets arranged in a uniaxial direction;forming an insulating film over the gate electrode by changing a gasinto plasma and supplying the plasma over the gate electrode from aplurality of discharging ports arranged in a uniaxial direction; forminga semiconductor film over the insulating film by changing a gas intoplasma and supplying the plasma over the insulating film from aplurality of discharging ports arranged in a uniaxial direction; forminga source wiring and a drain wiring by discharging a compositionincluding a conductive material over the semiconductor film from aplurality of discharge outlets arranged in a uniaxial direction; andsending an opposing substrate from a second roll so that the opposingsubstrate is attached to the flexible substrate.
 12. The method formanufacturing the display device according to claim 11, furthercomprising forming a liquid crystal over the flexible substrate by adroplet discharging means.
 13. The method for manufacturing the displaydevice according to claim 11, wherein each of the step of forming theinsulating film, and the step of forming the semiconductor film isperformed under an atmospheric pressure or a pressure around anatmospheric pressure.
 14. The method for manufacturing the displaydevice according to claim 11, further comprising: forming a mask patternover a conductive film by discharging a composition including a highmolecular weight resin over the conductive film from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a gateelectrode by etching the conductive film by changing a gas into plasmaand supplying the plasma from a plurality of discharging ports arrangedin a uniaxial direction to the conductive film; and removing the maskpattern by changing a gas into plasma and supplying the plasma from aplurality of discharging ports arranged in a uniaxial direction to themask pattern.
 15. The method for manufacturing the display deviceaccording to claim 14, wherein a fluoride gas or a chloride gas is usedfor etching the metal film.
 16. A method for manufacturing a displaydevice comprising: sending a flexible substrate from a first roll in awind-off side to a second roll to be reeled; forming a metal film overthe flexible substrate by discharging a composition including aconductive material over the flexible substrate from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a maskpattern over the metal film by discharging a composition including ahigh molecular weight resin over the metal film from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a wiring byetching the metal film by changing a gas into plasma and supplying theplasma from a plurality of discharging ports arranged in a uniaxialdirection to the metal film; removing the mask pattern by changing a gasinto plasma and supplying the plasma from a plurality of dischargingports arranged in a uniaxial direction to the mask; and forming a filmover the wiring by changing a gas into plasma and supplying the plasmaover the wiring from a plurality of discharging ports arranged in auniaxial direction, wherein forming the metal film, forming the maskpattern, forming the wiring, removing the mask pattern and forming thefilm are performed while sending the flexible substrate wound off fromthe first roll to the second roll to be reeled.
 17. The method formanufacturing the display device according to claim 16, furthercomprising forming a liquid crystal over the flexible substrate by adroplet discharging means.
 18. The method for manufacturing the displaydevice according to claim 16, wherein each of the step of forming thewiring, the step of removing the mask pattern, and the step of formingthe film is performed under an atmospheric pressure or a pressure aroundan atmospheric pressure.
 19. The method for manufacturing the displaydevice according to claim 16, wherein a fluoride gas or a chloride gasis used for etching the metal film.
 20. A method for manufacturing adisplay device comprising: sending a flexible substrate from a firstroll in a wind-off side to a second roll to be reeled; forming a metalfilm over the flexible substrate by discharging a composition includinga conductive material over the flexible substrate from a plurality ofdischarge outlets arranged in a uniaxial direction; forming a first filmover the metal film by changing a gas into plasma and supplying theplasma over the metal film from a plurality of discharging portsarranged in a uniaxial direction; forming a second film over the firstfilm by changing a gas into plasma and supplying the plasma over thefirst film from a plurality of discharging ports arranged in a uniaxialdirection; and removing a part of the first film or the second film bychanging a gas into plasma and supplying the plasma from a plurality ofdischarging ports arranged in a uniaxial direction, wherein forming themetal film, forming the first film, forming the second film, andremoving the part of the first film or the second film are performedwhile sending the flexible substrate wound off from the first roll tothe second roll to be reeled.
 21. The method for manufacturing thedisplay device according to claim 20, further comprising forming aliquid crystal over the flexible substrate by a droplet dischargingmeans.
 22. The method for manufacturing the display device according toclaim 20, wherein each of the step of forming the first film, the stepof forming the second film, and the step of removing the part of thefirst film or the second film is performed under an atmospheric pressureor a pressure around an atmospheric pressure.
 23. The method formanufacturing the display device according to claim 20, furthercomprising: forming a mask pattern over the metal film by discharging acomposition including a high molecular weight resin over the metal filmfrom a plurality of discharge outlets arranged in a uniaxial direction;forming a wiring by etching the metal film by changing a gas into plasmaand supplying the plasma from a plurality of discharging ports arrangedin a uniaxial direction to the metal film; and removing the mask patternby changing a gas into plasma and supplying the plasma from a pluralityof discharging ports arranged in a uniaxial direction to the maskpattern.
 24. The method for manufacturing the display device accordingto claim 23, wherein a fluoride gas or a chloride gas is used foretching the metal film.
 25. A method for manufacturing a display devicecomprising: sending a flexible substrate from a first roll in a wind-offside to a second roll to be reeled; forming a gate electrode over theflexible substrate by discharging a composition including a conductivematerial over the flexible substrate from a plurality of dischargeoutlets arranged in a uniaxial direction; forming an insulating filmover the gate electrode by changing a gas into plasma and supplying theplasma over the gate electrode from a plurality of discharging portsarranged in a uniaxial direction; forming a semiconductor film over theinsulating film by changing a gas into plasma and supplying the plasmaover the insulating film from a plurality of discharging ports arrangedin a uniaxial direction; and forming a source wiring and a drain wiringby discharging a composition including a conductive material over thesemiconductor film from a plurality of discharge outlets arranged in auniaxial direction, wherein forming the gate electrode, forming theinsulating film, forming the semiconductor film, and forming the sourcewiring and the drain wiring are performed while sending the flexiblesubstrate wound off from the first roll to the second roll to be reeled.26. The method for manufacturing the display device according to claim25, further comprising forming a liquid crystal over the flexiblesubstrate by a droplet discharging means.
 27. The method formanufacturing the display device according to claim 25, wherein each ofthe step of forming the insulating film, and the step of forming thesemiconductor film is performed under an atmospheric pressure or apressure around an atmospheric pressure.
 28. The method formanufacturing the display device according to claim 25, furthercomprising: forming a mask pattern over a conductive film by discharginga composition including a high molecular weight resin over theconductive film from a plurality of discharge outlets arranged in auniaxial direction; forming a gate electrode by etching the conductivefilm by changing a gas into plasma and supplying the plasma from aplurality of discharging ports arranged in a uniaxial direction to theconductive film; and removing the mask pattern by changing a gas intoplasma and supplying the plasma from a plurality of discharging portsarranged in a uniaxial direction to the mask pattern.
 29. The method formanufacturing the display device according to claim 28, wherein afluoride gas or a chloride gas is used for etching the metal film.